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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT468 is designed for general purpose low frequency power amplifier applications. SOT-23 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 225 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................... 25 V VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V VEBO Emitter to Base Voltage ................................................................................................................................ 5 V IC Collector Current ............................................................................................................................................... 1 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE fT Cob Min. 25 20 5 85 Typ. 190 22 Max. 1 500 1 400 MHz pF Unit V V V uA mV V IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 IC=0.8A, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions Classification of hFE Rank Range B 85-170 C 120-240 D 200-400 HMBT468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 2/5 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE=2V hFE 100 10 VCE(s at) @ IC=10IB 10 0.1 1 10 100 1000 10000 1 0.1 1 10 100 1000 10000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 1000 Cutoff Frequency & Ic Cutoff Frequency (MHz) On Voltage (mV) VCE=2V 1000 VBE(on) @ VCE=2V 100 100 0.1 1 10 100 1000 10000 10 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 IR Reflow Profile 260 240 220 200 10+/-2 sec Capacitance (pF) Temperature( C) 180 160 140 120 100 80 60 40 20 150+/-30 40+/-20 sec 10 Cob o 1 0.1 1 10 100 1000 0 0 50 100 150 200 250 300 Reverse Biased Voltage (V) Time(sec) HMBT468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 3/5 Temperature Profile for Dip Soldering 300 10+/-2 sec 250 Temperature( C) 200 o 150 100 120+/-20 sec 50 0 0 50 100 150 200 250 300 350 Time(sec) HMBT468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 4/5 468 3 Pb Free Mark BS 1 2 Pb-Free: " " (Note) Normal: None Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 V G DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBT468 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HN200204 Issued Date : 2001.07.01 Revised Date : 2004.09.08 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HMBT468 HSMC Product Specification |
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